| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor layer which can select the plane direction of growth plane facet of a semiconductor layer to be grown on a substrate and can suppress a piezoelectric field of the semiconductor layer or can improve its crystal quality as needed. <P>SOLUTION: A semiconductor layer is grown which is constituted of a semiconductor having hexagonal crystal structure and has 11-22 or 10-13 plane direction on the 1-100 plane of a substrate constituted of a material having hexagonal crystal structure. Otherwise, a semiconductor layer which is constituted of the semiconductor having the hexagonal crystal structure and has 11-20 plane direction on the 1-102 plane of a substrate constituted of a material having the hexagonal crystal structure is grown while exposing at least one facet selected from a group of 11-22 plane facet, 0001 plane facet, 000-1 plane facet, 33-62 plane facet and 1-100 plane facet. <P>COPYRIGHT: (C)2009,JPO&INPIT |
