| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of reducing a forward voltage while maintaining light-emitting output and excellent in reliability. <P>SOLUTION: The semiconductor light-emitting element is provided with an Si substrate 1, metal adhesion layer 2, reflection metal layer 3 made of a multilayer film of a metal material having optical reflection performance, SiO<SB>2</SB>film 4, ohmic contact junction portion 5 provided on a predetermined position of the SiO<SB>2</SB>film 4, GaP layer 6 including an Mg-doped GaP layer 6A and a Zn-doped GaP layer 6B, p-type GaInP interposition layer 7. p-type AlGaInP cladding layer 8, undoped multilayer quantum well active layer 9, n-type AlGaInP cladding layer 10, n-type AlGaInP window layer 11, n-type GaAs contact layer 12, first electrode 13, and second electrode 14 provided on the external connection side of the Si substrate 1. The light-emitting portion consisting of the p-type AlGaInP cladding layer 8, undoped multilayer quantum well active layer 9 and n-type AlGaInP cladding layer 10 is provided so as to be separated by ≥300 nm from the ohmic contact junction portion 5. <P>COPYRIGHT: (C)2009,JPO&INPIT |
