| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for metal having a quick copper polishing speed and a good copper/tantalum polish selectivity and capable of enhancing planarity by reducing the dishing. <P>SOLUTION: The polishing solution for metal used for chemical mechanical planarization in the production process of a substrate for semiconductor integrated circuit contains (A) an organic/inorganic composite particles, (B) quinoline carboxylic acid or its derivative, (C) an amino acid, and (D) an oxidizing agent. It is preferably employed for principally polishing core wiring. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
