| 摘要 |
A voltage switch circuit of the semiconductor device is provided to prevent the change of output characteristic due to the kind of the peripheral circuit, performance characteristic and temperature by not using break down voltage of diode, and the threshold voltage of transistor to raise a voltage. In a voltage switch circuit of the semiconductor device, a first transistor(230) and the second transistor is connected in parallel with the third terminal(210) to which the enable signal is inputted(240). A third transistor is connected with the first transistor and the second terminal(205) to which operation voltage is inputted. A fourth transistor(260) and the third transistor form a coupling circuit while being connected to the second transistor and the second terminal. A fifth transistor(270) is connected between the first terminal receiving a clock signal and the fourth transistor outputting voltage in parallel and is connected between the second transistor and the fourth transistor. In the voltage switch circuit of the semiconductor, capacitor(280) is connected between the first terminal and fifth transistor. If VDD is inputted into the third terminal, fourth terminal outputs the power source VSS and if VSS is inputted into the third terminal, fourth terminal outputs the boosted operating voltage.
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