发明名称 |
Forming floating body RAM using bulk silicon substrate |
摘要 |
A method for forming Z-RAM cells and the resulting semiconductor structure are provided. The semiconductor structure includes a semiconductor substrate; a dielectric layer on the semiconductor substrate; an opening in the dielectric layer, wherein the semiconductor substrate is exposed through the opening; a semiconductor strip on the dielectric layer and adjacent the opening; a gate dielectric over a surface of the semiconductor strip; a gate electrode over the gate dielectric; and a source/drain region in the semiconductor strip and adjacent the gate electrode.
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申请公布号 |
US2008283894(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20070803233 |
申请日期 |
2007.05.14 |
申请人 |
FUNG KA-HING;DIAZ CARLOS H |
发明人 |
FUNG KA-HING;DIAZ CARLOS H. |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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