发明名称 |
METHODS OF STRESSING TRANSISTOR CHANNEL WITH REPLACED GATE |
摘要 |
Methods of stressing a channel of a transistor with a replaced gate and related structures are disclosed. A method may include providing an intrinsically stressed material over the transistor including a gate thereof; removing a portion of the intrinsically stressed material over the gate; removing at least a portion of the gate, allowing stress retained by the gate to be transferred to the channel; replacing (or refilling) the gate with a replacement gate; and removing the intrinsically stressed material. Removing and replacing the gate allows stress retained by the original gate to be transferred to the channel, with the replacement gate maintaining (memorizing) that situation. The methods do not damage the gate dielectric.
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申请公布号 |
US2008286916(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080179042 |
申请日期 |
2008.07.24 |
申请人 |
LUO ZHIJIONG;ZHU HUILONG;CHONG YUNG FU;TESSIER BRIAN L |
发明人 |
LUO ZHIJIONG;ZHU HUILONG;CHONG YUNG FU;TESSIER BRIAN L. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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