发明名称 |
GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND PROCESS FOR PREPARING THE SAME |
摘要 |
A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In<SUB>2</SUB>O<SUB>3 </SUB>including at least one of Zn, Mg and Cu.
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申请公布号 |
US2008286894(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080166113 |
申请日期 |
2008.07.01 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHAE SEUNG WAN;KWAK JUN SUB;SHIN HYOUN SOO;SEO JUN HO |
分类号 |
H01L33/06;H01L33/10;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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