| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a resist composition to be used in the method, a developing solution to be used in the method and a rinsing solution to be used in the method. <P>SOLUTION: The pattern forming method includes: (α) coating a resist composition including a resin that includes a specific repeating unit, and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (β) exposing; and (γ) developing with a negative developing solution. There are also provided the resist composition to be used in the method, the developing solution to be used in the method and the rinsing solution to be used in the method. <P>COPYRIGHT: (C)2009,JPO&INPIT |
