| 摘要 |
The small gap of the size can completely filled without generating voids in the semiconductor device of 45nm or less. The very small gap of the aspect ratio higher than 10:1 can be filled by performing repetitive evaporation -CMP- etching. The gap fill method of the semiconductor device is provided. The method for filling the gap(220) of the ultra large scale integrated semiconductor device is provided. The first step is for filling a filling material in a gap. The second step is for removing the filling material as the maximum depth and width of the void formed in the gap. The filling of the first step is performed using the high density plasma chemical vapor deposition.
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