| 摘要 |
The bit line spacer can be made thin by functioning the polysilicon layer as an etching stop layer in the self-align contact process. The fail of a self-align contact process and the open margin can be reduced. And the simplification of process can be achieved. Provided is the manufacturing method of the semiconductor device. A step is for forming the first interlayer insulating film(22) at the upper part of sub-layer. A step is for forming the bit line pattern on the first interlayer insulating film. A step is for forming the etching stopping layer(polysilicon layer, 26C) which covers the side wall and upper side of the bit line pattern. A step is for forming the second inter metal dielectric between the bit line pattern. A step is for forming the storage node contact hole(28) which opens the sub-layer between the bit line patterns by etching the second inter metal dielectric and the first interlayer insulating film. A step is for changing the etching stopping layer to t he insulating layer(26B). A step is for forming the storage node contact plug which fills storage node contact hole.
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