| 摘要 |
An FeRAM is fabricated by a method comprising a step for forming a lower electrode layer (24), a step for forming a first ferroelectric film (25a) on the lower electrode layer (24), a step for forming an amorphous second ferroelectric film (25b) internally containing iridium on the first ferroelectric film (25a), a step for crystallizing the second ferroelectric film (25b) by heat treating it in an oxidizing atmosphere and for diffusing iridium in the second ferroelectric film (25b) into the first ferroelectric film (25a), a step for forming an upper electrode layer (26) on the second ferroelectric film (25b), and a step for forming a capacitor structure by processing the upper electrode layer (26), the second ferroelectric film (25b), the first ferroelectric film (25a), and the lower electrode layer (24), respectively. With such an arrangement, high yield can be ensured without increasing the leakage current while increasing the quantity of inverted charge of a ferroelectric capacitor structure (30), thereby obtaining a highly reliable FeRAM.
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