| 摘要 |
FIELD: chemistry. ^ SUBSTANCE: invention pertains to carbon material coated in tantalum carbide, which can be used as a component part of a device for making monocrystals of binary semiconductor compounds. According to the invention, carbon material consists of carbon substrate and film, formed indirectly or through intermediate layer on the above mentioned carbon substrate. The film is 10-100 mcm thick and consists of several tightly packed monocrystals of tantalum carbide. On an X-ray diffraction pattern of the film, the diffraction intensity of plane (220) of tantalum carbide has a maximum level. The above mentioned diffraction intensity is not less than 4 times more than the intensity of the second largest diffraction intensity. The method of obtaining the above mentioned material involves forming on the carbon substrate, film of tantalum carbide using CVD method and thermal processing at 1600-2400°C. ^ EFFECT: obtaining material, with high resistance to corrosion by reducing gas and high resistance to heat shock at high temperature. ^ 18 cl, 30 ex, 7 tbl, 22 dwg |
