| 摘要 |
A capacitor in which a ferroelectric film (4) is held between a lower electrode (3) and an upper electrode (5) is formed above a conductive plug (1), with a conductive base structure (2) interposed therebetween. A hard mask (6) used in patterning the conductive base structure (2) is formed on the upper electrode (5). A protective film (7) covering at least an exposed portion of the ferroelectric film (4) is formed and then heat treatment is applied to the ferroelectric film (4) in an oxygen gas atmosphere. This prevents elements constituting the ferroelectric film (4) from being released to the outside at the time of the heat treatment by thus forming the protective film (7) before applying the heat treatment to the ferroelectric film (4). Further, oxygen penetration into the conductive plug (1) is blocked by applying the heat treatment in the state where the conductive base structure (2) is not patterned.
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