SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, BACKLIGHT, DISPLAY UNIT, ELECTRONIC DEVICE, AND LIGHT-EMITTING UNIT

摘要

A semiconductor light-emitting element includes a nitride-based Group III-V compound semiconductor, wherein the semiconductor light-emitting element has a structure in which an active layer including one or a plurality of well layers is sandwiched between a p-side cladding layer and an n-side cladding layer, and the composition of at least one of the well layers of the active layer is modulated in the direction perpendicular to the thickness direction of the least one of the well layers.