| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device that enables high-speed operation, has a semiconductor element having a low drive voltage, and ensures low power consumption without going through complicated processes. SOLUTION: A locally thinned region in a semiconductor layer is formed by fusing a peripheral semiconductor layer by heat treatment to allow the fused semiconductor material to flow. An island-shaped semiconductor layer having an opening in the thinned region is formed, the edge of the semiconductor layer around the opening is heated locally by laser beams for fusing, the fused semiconductor material flows in the opening to fill the opening. The opening is filled with the flowing semiconductor material, and a semiconductor layer region having a thin film thickness is realized by solidification. Therefore, the semiconductor layer becomes a continuous semiconductor layer having a thinned region locally. COPYRIGHT: (C)2009,JPO&INPIT
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