| 摘要 |
PROBLEM TO BE SOLVED: To provide a heavily-doped buried layer that is implanted at a high energy in a lightly-doped separation well. SOLUTION: The buried layer 500 is doped with a dopant having the same conductivity as that of a well where the buried layer 500 is provided. The buried layer 500 reduces the size of a channel of a flash EPROM cell and achieves higher array density. A low resistance path is provided between the channels of the flash EPROM cell by the buried layer 500, thereby reducing the channel of the flash EPROM until erasure can be performed by giving the voltage (potential difference) between a gate line 28 and the substrate of the cell. COPYRIGHT: (C)2009,JPO&INPIT
|
