BIPOLAR TRANSISTOR DRIVERS

摘要

We describe a methods of controlling the drive to a BJT or IGBT transistor to control the saturation of said transistor to achieve fast turn-off. An embodiment of the method comprises determining a quantity of charge in the transistor for a combination of collector current and a time for which said collector current flows, and delivering a pulse of current or voltage to a control terminal of said BJT or IGBT transistor such that a total quantity of charge delivered to a base of said BJT or to an internal base of said IGBT in said pulse of base or gate current or voltage is sufficient to maintain said collector current for said time and to sustain said transistor in saturation or quasi - saturation up to or after the end of said base current or gate voltage pulse until the end of said time.