| 摘要 |
Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a chemical vapor deposition (CVD) process using high gas flow rate of a tetrakis(ethylmethylamino) titanium (TEMAT) precursor vapor along with an inert carrier gas at a low process chamber pressure that provides high deposition rate of conformal TiN films with good step coverage in surface reaction limited regime. Other embodiments describe cyclical TiN deposition methods using TEMAT precursor vapor and a nitrogen precursor.
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