发明名称 Multi-port memory device
摘要 A multi-port memory device having a plurality of ports performing a serial input/output (I/O) communication with external devices, and a plurality of banks performing a parallel I/O communication with the ports through a plurality of global I/O lines. The multi-port memory device includes: a write clock generating unit for generating a write clock selectively toggled only while write data are applied; a write control unit for generating a write flag signal group and a write driver enable signal in response to the write clock and a write command; a data latch unit for outputting intermediate write data by storing burst write data under the control of the write flag signal group; and a write driver for receiving the intermediate write data to write final write data in a memory cell of a corresponding bank in response to the write driver enable signal and a data mask signal group.
申请公布号 US7447095(B2) 申请公布日期 2008.11.04
申请号 US20060529202 申请日期 2006.09.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM JAE-IL;DO CHANG-HO
分类号 G11C7/00;G11C7/10;G11C8/00 主分类号 G11C7/00
代理机构 代理人
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