| 发明名称 |
Method of driving a light emitting device |
| 摘要 |
The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |V<SUB>DS</SUB>| of the transistor is set equal to or larger than 1 V and equal to or less than |V<SUB>GS</SUB>-V<SUB>th</SUB>|. The transistor is used as a resistor so that the resistance of a light emitting element can be held by the transistor. This slows down an increase in internal resistance of the light emitting element and the resultant current value reduction. Accordingly, a change with time in light emission luminance is reduced and the reliability is improved.
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| 申请公布号 |
US7445946(B2) |
申请公布日期 |
2008.11.04 |
| 申请号 |
US20030425708 |
申请日期 |
2003.04.30 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OSAME MITSUAKI;KOYAMA JUN |
| 分类号 |
H01L21/00;H01L51/50;G09G3/20;G09G3/30;H01L29/786;H05B33/08;H05B33/14 |
主分类号 |
H01L21/00 |
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