THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A TFT(Thin Film Transistor) and a method for manufacturing the same are provided to reduce the fault generation by enabling a gate insulating layer to have durability, and reduce the production cost by forming the gate insulating layer through a solution process. A gate line(110) is formed on a substrate crossing over a data line(120). A TFT is placed on the cross section area of the gate line and data line. The TFT comprises a gate insulating layer produced using organic-inorganic hybrid type compound having the aryl or the cycloalkyl. The gate insulating layer has the durability by the external circumstance. Therefore, the deterioration of the TFT performance due to the damage of the gate insulating layer is prevented.