| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a breakdown voltage. SOLUTION: An n-diffusion region 5 to be a drain region is formed in an n-type semiconductor region 3, and a p diffusion region 7 and an n+diffusion region 8 to be a source region are formed on one side of the n-diffusion region 5. A groove part 10 is formed on the other side of the n-diffusion region 5, and an insulator 12 is filled. A p-embedded layer 13 is formed right below the n-diffusion region 5. An n+diffusion region 14 to which a high potential is to be applied is formed in the n-type semiconductor region 3 and is electrically connected with the n-diffusion region 5 by wiring 20 having a resistor R. On the surface of the part of the p diffusion region 7 held between the n+diffusion region 8 and the n-diffusion region 5, a gate insulating film 19 is interposed and a gate electrode 17 is formed. COPYRIGHT: (C)2009,JPO&INPIT |
