发明名称 |
Organic thin film transistor, method for fabricating the same, and liquid crystal display device with the same |
摘要 |
An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
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申请公布号 |
US7439103(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20050207308 |
申请日期 |
2005.08.19 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
SEO HYUN SIK;NAM DAE HYUN;CHOI NACK BONG |
分类号 |
H01L21/335;H01L21/8232 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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