发明名称 Organic thin film transistor, method for fabricating the same, and liquid crystal display device with the same
摘要 An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
申请公布号 US7439103(B2) 申请公布日期 2008.10.21
申请号 US20050207308 申请日期 2005.08.19
申请人 LG DISPLAY CO., LTD. 发明人 SEO HYUN SIK;NAM DAE HYUN;CHOI NACK BONG
分类号 H01L21/335;H01L21/8232 主分类号 H01L21/335
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