TECHNIQUES FOR FORMING SHALLOW JUNCTIONS

摘要

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of : digermane (Ge<SUB>2</SUB>H<SUB>6</SUB>), germanium nitride (Ge<SUB>3</SUB>N<SUB>4</SUB>), germanium- fluorine compounds (GF<SUB>n</SUB>, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.