| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To propose a configuration of a semiconductor device with a good response, in which S value is small and lowering in ON-state current is suppressed, and a method for manufacturing the semiconductor device. <P>SOLUTION: The film of a source region or drain region is formed thicker than that of a channel-forming region. In the manufacturing method of such a semiconductor device, firstly an amorphous semiconductor layer is formed on the unevenness formed on an insulating layer arranged on a substrate. Then, a crystalline semiconductor layer of different film thickness is formed by irradiating the amorphous semiconductor with a laser beams and melting it. After that, the source region or drain region is formed by adding impurities to the thick portions of the film of the crystalline semiconductor layer. The region wherein impurities are not added is made to be the channel-forming region, which can be manufactured by forming a conductive layer electrically connected to the source region or drain region. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
