| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of changing the direction of a current of a variable resistive element, and executing erasing (resetting) in a memory cell string unit, and its data erasing method. <P>SOLUTION: The nonvolatile semiconductor memory device includes: a memory sell string including a plurality of memory cells MC each having a variable resistive element VR and a switching element TR having the variable-resistance element connected between one end and the other end of a current path, and having the current paths of the plurality of memory cells connected in series; a memory cell array including a plurality of first selection elements S2 connected to one end of the current path of the memory cell string and a plurality of second selection elements S1 connected to the other end of the current path of the memory cell string; a bit line BL electrically connected to one end of the current path of the first selection element; and a source line SL electrically connected to one end of the current path of the second selection element. <P>COPYRIGHT: (C)2009,JPO&INPIT |
