发明名称 |
Method of fabricating semiconductor device |
摘要 |
A method of fabricating a semiconductor device includes steps of forming a gate electrode on the surface of a region of a semiconductor substrate provided with a first element, forming an insulating film to cover the surface of the gate electrode and another region of the semiconductor substrate provided with a second element and forming a sidewall insulating film covering the side surface of the gate electrode while leaving the insulating film on the region of the semiconductor substrate provided with the second element by a prescribed thickness by etching the insulating film up to an intermediate portion from the surface thereof.
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申请公布号 |
US2008254583(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20080078313 |
申请日期 |
2008.03.28 |
申请人 |
TAKAHASHI KEN-ICHI;IBARA YOSHIKAZU |
发明人 |
TAKAHASHI KEN-ICHI;IBARA YOSHIKAZU |
分类号 |
H01L21/8249 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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