发明名称 ROTATING MAGNETRON SPUTTERING APPARATUS
摘要 <p>In a rotating magnetron sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.</p>
申请公布号 WO2008123434(A1) 申请公布日期 2008.10.16
申请号 WO2008JP56139 申请日期 2008.03.28
申请人 NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;OHMI, TADAHIRO;GOTO, TETSUYA;MATSUOKA, TAKAAKI 发明人 OHMI, TADAHIRO;GOTO, TETSUYA;MATSUOKA, TAKAAKI
分类号 C23C14/35 主分类号 C23C14/35
代理机构 代理人
主权项
地址