| 摘要 |
<p>A method of manufacturing a silicon carbide semiconductor device having low interface state density in an interface region between a gate insulating film (20) and a silicon carbide layer (11) is provided. An epitaxially grown layer (11) is grown on a 4H-SiC substrate (10), and thereafter ion implantation is performed to form a p well region (12), a source region (13) and a p + contact region (15) that are ion implantation layers. Thereafter, using thermal oxidation or CVD, the gate insulating film (20) formed by a silicon oxide film is formed on the p well region (12), the source region (13) and the p + contact region (15). Then, plasma is generated using a gas containing N 2 O, which is the gas containing at least any one of oxygen and nitrogen, so as to expose the gate insulating film (20) to plasma.</p> |
