Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method

摘要

A pattern forming method includes (a) coating a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution:
wherein R NGH1 represents a hydrogen atom or an alkyl group; and R NGH2 to R NGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of R NGH2 to R NGH4 represents a hydroxyl group.