发明名称 |
Gallium nitride semiconductor device |
摘要 |
A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n- doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n- doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
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申请公布号 |
US7436039(B2) |
申请公布日期 |
2008.10.14 |
申请号 |
US20050030554 |
申请日期 |
2005.01.06 |
申请人 |
VELOX SEMICONDUCTOR CORPORATION |
发明人 |
ZHU TINGGANG;SHELTON BRYAN S.;PABISZ MAREK K.;GOTTFRIED MARK;LIU LINLIN;POPHRISTIC MILAN;MURPHY MICHAEL;STALL RICHARD A. |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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