| 摘要 |
A driving-voltage adjustable transistor and a manufacturing method are provided to switch on or off according to resistance value of a resistance layer formed between a gate electrode and a grounding electrode. A driving-voltage adjustable transistor comprises drain and source regions(51,52), a channel region(53), a drain electrode(11), a source electrode(12), a gate electrode(13), a resistance layer(20), and a grounding electrode. The drain and source regions are formed on a semiconductor substrate(50). The channel region is formed between the drain and source regions. The drain electrode, the source electrode, and the gate electrode are respectively formed on the drain region, the source region, and the channel region. The resistance layer is formed on the gate electrode. The grounding electrode is formed on the resistance layer. |
