A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to overlap dummy patterns with each other by preventing parasitic capacitance by using a contact dummy pattern. A first dummy pattern(101) is formed on a substrate. A second dummy pattern(102) is formed on the first dummy pattern to be overlapped with the first dummy pattern. A third dummy pattern(103) is formed to be electrically connected to the first and second dummy patterns. A fourth dummy pattern(104) is formed on the third dummy pattern. The third dummy pattern includes a fifth dummy pattern(103a) for connecting the first dummy pattern with the fourth dummy pattern, and a sixth dummy pattern(103b) for connecting the second dummy pattern with the fourth dummy pattern.