METHOD FOR OXIDE DIELECTRIC LAYER FORMATION, AND CAPACITOR LAYER FORMING MATERIAL COMPRISING OXIDE DIELECTRIC LAYER FORMED BY SAID FORMATION METHOD,申请号KR20077021615-传众专利搜索

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发明名称	METHOD FOR OXIDE DIELECTRIC LAYER FORMATION, AND CAPACITOR LAYER FORMING MATERIAL COMPRISING OXIDE DIELECTRIC LAYER FORMED BY SAID FORMATION METHOD
摘要
申请公布号	KR100861959(B1)	申请公布日期	2008.10.09
申请号	KR20077021615	申请日期	2007.09.20
申请人		发明人
分类号	H01L27/108;H01G13/00	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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