| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor crystal and a semiconductor device, for which a hetero structure field-effect transistor whose characteristic is improved much more than a conventional one is made as an example. SOLUTION: In the hetero structure field-effect transistor, a GaN buffer layer 2 is formed on a substrate 1, and a Ga<SB>a</SB>In<SB>1-a</SB>N channel layer 3 on the GaN layer buffer layer 2, an Al<SB>x</SB>In<SB>1-x</SB>N interlayer 4 on the Ga<SB>a</SB>In<SB>1-a</SB>N channel layer 3, and an Al<SB>y</SB>Ga<SB>z</SB>In<SB>1-y-z</SB>N barrier layer 5 on the Al<SB>x</SB>In<SB>1-x</SB>N interlayer 4, and a source electrode 6, a gate electrode 8 and a drain electrode 7 on the Al<SB>y</SB>Ga<SB>z</SB>In<SB>1-y-z</SB>N barrier layer 5. Here, 0<a<1, 0<x<1, 0<y, 0<z and y+z≤1. COPYRIGHT: (C)2009,JPO&INPIT
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