| 摘要 |
PURPOSE:To form easily and with high precision an active layer region of narrow width by a method wherein impurities are diffused to a substrate using as a diffusion mask an Si compound of laminated structure formed on the substrate in stripe width of an active layer. CONSTITUTION:After a film 23 consisting of an Si nitride film 21 and an SiO2 film 22 is formed in a stripe type on a compound semiconductor substrate, an Si nitride film 24 is formed on the whole surface. Then a resist film 25 is coated on the edge 41 on one side of the film 23, and the Si nitride film 24 is etched to be removed. Sulfur is diffused in succession using the film 23 and the Si nitride film 24 as masks to form an N-type region 26. Then after the Si nitride film 24 is removed, an SiO2 film 30 is formed on the whole surface, and the half of the SiO2 film 30 on the side not formed with the N-type region 26 is removed using a resist film 31. Thereupon zinc is diffused using the film 23 and the SiO2 film 30 as masks to form a P-type region 32.
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