发明名称 |
METHOD OF FORMING AlGaN CRYSTAL LAYER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming an excellent surface flatness AlGaN crystal layer. <P>SOLUTION: The AlGaN layer whose surface is substantially flat on atomic level is formed after a buffer layer having a stress relaxation effect and AlGaN layer are formed on a template substrate to which an in-plane compression stress is applied and on which a surface layer being substantially flat on atomic level is formed. More specifically, the buffer layer having the stress relaxation effect is suitably formed by making a second AlN layer using gas mixed with TMA and TMG at 600°C or less to the extent that the mixing ratio of TMA and TMG is 3/17 or more and 6/17 or less if the surface layer of the template substrate comprises the first AlN layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2008235769(A) |
申请公布日期 |
2008.10.02 |
申请号 |
JP20070076490 |
申请日期 |
2007.03.23 |
申请人 |
NGK INSULATORS LTD |
发明人 |
KOSAKA KEI;SUMIYA SHIGEAKI;SHIBATA TOMOHIKO |
分类号 |
H01L21/205;H01L33/12;H01L33/32 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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