| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element for preventing peeling of wire connected to an electrode on a ridge and assuring higher light confinement effect and also provide a manufacturing method thereof. <P>SOLUTION: The semiconductor laser element 1 is provided with a striped ridge 23a which is formed including a part protruded on the upper surface of a p-type semiconductor layer 23 of the nitride semiconductor layer 20 laminated on the front surface of a substrate 10, and is also provided with a first protection film 30 having a refractive index lower than that of the p-type semiconductor layer 23 and covering the front surface of the p-type semiconductor layer 23 separated by a predetermined distance from the ridge 23a, a second protection film 40 having a refractive index lower than that of the p-type semiconductor layer 23 and covering a side surface of the ridge 23a, front surface of the p-type semiconductor layer 23 and the first protection film 30, and a p-electrode 50 connected to the upper surface of the ridge 23a and covering the second protection film 40. In the upper surface of the p-electrode 50, a part just above the second protection film 40 on the first protection film 30 is formed higher than the part just above the ridge. <P>COPYRIGHT: (C)2009,JPO&INPIT |
