SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor structure and a manufacturing method thereof are provided to enhance operational characteristics of a field effect transistor by applying stress. A first semiconductor element includes a first active semiconductor region(432) and a first gate electrode(322) crossing the first active semiconductor region. A second semiconductor element includes a second active semiconductor region(434) and a second gate electrode(324) crossing the second active semiconductor region. A first liner(402) is formed to cover the first semiconductor element. A second liner(404) is formed on the second semiconductor element and includes a first region having a first thickness on a top part of the second gate electrode and a second region having a second thickness thicker than the first thickness. The first region is overlapped with a first liner in an overlap region. The second region is extended from an edge of the second gate electrode. A first via comes in contact with at least one of the first and second gate electrodes. The first via is extended in the first and second liners. A second via comes in contact with one of a source region and a drain region of the second semiconductor element.