| 摘要 |
A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, having a lower impurity concentration than the first semiconductor layer, a third semiconductor layer of a second conductivity type provided on the second semiconductor layer, a base region of the second conductivity type provided in the third semiconductor layer, a source region of the first conductivity type provided in the base region, a first drain region of the first conductivity type provided in the third semiconductor layer, the first drain region being apart from the base region, a lightly doped drain region of the first conductivity type provided between the first drain region and the source region, the lightly doped drain region being in contact with the first drain region, the lightly doped drain having lower impurity concentration than the first drain region, a second drain region of the first conductivity type provided in the third semiconductor layer, and provided between the second semiconductor layer and the first drain region, the second drain region being in contact with the first drain region, a third drain region of the second conductivity type provided in the third semiconductor layer, provided between the second drain region and the second semiconductor layer, the third drain region being in contact with the second drain region.
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