发明名称 |
SILICON CARBIDE BIPOLAR SEMICONDUCTOR DEVICE |
摘要 |
In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.
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申请公布号 |
EP1973165(A1) |
申请公布日期 |
2008.09.24 |
申请号 |
EP20060834573 |
申请日期 |
2006.12.13 |
申请人 |
THE KANSAI ELECTRIC POWER CO., INC.;CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY |
发明人 |
ISHII, RYOSUKE;NAKAYAMA, KOJI;SUGAWARA, YOSHITAKA;MIYANAGI, TOSHIYUKI;TSUCHIDA, HIDEKAZU;KAMATA, ISAHO;NAKAMURA, TOMONORI |
分类号 |
H01L29/24;H01L29/861;H01L21/04;H01L29/06 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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地址 |
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