| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to increase the amount of a current by forming a P+ type poly silicon layer having a uniform impurity density. A semiconductor substrate(100) selectively etched to form a fin active region(104). A first undoped poly silicon layer is formed on an upper portion of the whole surface. The first undoped poly silicon layer is planarized until the upper portion of the fin active region is exposed. A first ion implantation process is performed to implant impurities into the first undoped poly silicon layer. A second undoped poly silicon layer(108a) is formed on an upper portion of the first undoped poly silicon layer. A second ion implantation process is performed to implant the impurities into the second undoped poly silicon layer. Densities of the impurities in the first and second ion implantation processes are identical to each other. The impurities are P+ type or N+ type.</p> |
