| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor device which establishes proper contact of the source region and the drain region of a semiconductor layer, stabilization of the capacitance of a storage capacitor, reduction in leakage between the source and the drain, improvement in the breakdown voltage of the gate insulating film, and reduction in the contact resistance. SOLUTION: This thin film transistor device comprises: a semiconductor layer including a source region, a drain region and a channel region which are formed in predetermined region on substrate; metal films formed on the semiconductor layer; a gate insulating film formed on the metal film and the semiconductor layer; a gate electrode; an interlayer insulating film; and wiring electrodes. The metal film is formed on the source region and the drain region of the semiconductor layer, at least in a region at the bottom of a contact hole, wherein a thickness of the semiconductor layer, in a region where the metal film is not formed is thinner than that where the metal film is formed. COPYRIGHT: (C)2008,JPO&INPIT |
