| 摘要 |
PROBLEM TO BE SOLVED: To control the number of moles in a raw material gas supplied to a reaction chamber, thereby preventing the deterioration of yields caused by morphologic abnormalities. SOLUTION: In the manufacturing of the semiconductor device for forming a thin film using the MOCVD method, the semiconductor device has a plurality of raw material vessels for supplying raw material compounds, and by arbitrarily selecting the raw material vessel used for supplying the raw material compound together with a carrier gas, the raw material vessel used for supply is added when the concentration of the raw material gas cannot be kept constant at a carrier gas flow rate, and when the raw material compound in the raw material vessel runs short, the other raw material vessel is used to supply the raw material compound, thus replenishing the raw material compound while continuing the supply so that the number of moles in the raw gas supplied to the reaction chamber can be stably controlled, thus controlling the deterioration of yields caused by morphologic abnormalities. COPYRIGHT: (C)2008,JPO&INPIT
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