| 摘要 |
A self-referencing redundancy scheme in a content addressable memory may use a faulty bit table, populated during manufacturing, to indicate, not only the address of all the defective memory locations, but also the data which they should hold. Then, during read out, a read out state machine may access the faulty bit table, determine the data the faulty location should have held, and write that faulty data onto latches associated with the faulty memory elements.
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