| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device that can reduce exhaust from a chamber not to defuse an atmosphere in the chamber to the outside. SOLUTION: The substrate processing device 1 is provided with a chamber 40 to house a processing tank 20 and a shower nozzle 30 and a shutter 41 to seal the chamber 40. Thus, a substrate W can be processed within the chamber 40 without exhausting from the chamber 40. A distance between the upper face of the processing tank 20 and the lower face of the shutter 41 is≥20 mm and≤50 mm, and a distance between the outer face of the processing tank 20 and the inner face of the chamber 40 is≥5 mm and≤20 mm. Thus, the internal volume of the chamber 40 is small, and it is unnecessary to exhaust a large volume from the chamber 40 even when the shutter 41 is opened. COPYRIGHT: (C)2008,JPO&INPIT
|
