Method of manufacturing an interconnection structure with air gaps for an integrated circuit

摘要

The method involves depositing a sacrificial material e.g. silicon dioxide, layer (11) on a substrate (10), and etching the layer according to a pattern corresponding to electrical conductors. A membrane layer made of permeable material is deposited on an etched surface of the material layer. The material is decomposed using an agent, where air cavities are formed at the decomposed material. The electric conductors, which are separated by the air cavities, are formed in the etched pattern. An electrically insulation material layer is deposited for covering interconnections.