| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light element, in which a contact area between a semiconductor layer and an electrode layer on an upper surface of a waveguide ridge is prevented from decreasing and etching damage in the semiconductor layer is prevented thereby. SOLUTION: The method includes steps of: forming a resist pattern 76 with a stripe-shaped resist film portion corresponding to a waveguide ridge 40 on a semiconductor lamination structure; forming the waveguide ridge 40 by forming channels 38 by dry etching by using the resist pattern 76 as a mask; forming a SiO<SB>2</SB>film 78 on a surface of the semiconductor lamination structure including the waveguide ridge and the channels, on which the resist pattern 76 is left; etching and removing the SiO<SB>2</SB>film 78 of side surfaces of the waveguide ridge while leaving the SiO<SB>2</SB>film 78 on a bottom surface of the channels and the SiO<SB>2</SB>film 78 on the top portion of the waveguide ridge 40, to expose the side walls of the waveguide ridge; removing the resist pattern 76 and the SiO<SB>2</SB>film 78 left thereon by a lift-off method; and forming an electrode layer 46 on surfaces of a top portion and side walls of the waveguide ridge. COPYRIGHT: (C)2008,JPO&INPIT
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