| 摘要 |
PROBLEM TO BE SOLVED: To restrain short channel effect in a microfabricated device by reducing a "shadow" region during pocket injection with an inclination in a production process of a nonvolatile semiconductor memory device of a virtual grounding array configuration. SOLUTION: A multilayer insulating film 102, a lower polycrystalline silicone film 103 and a silicon nitride film 104 are formed successively on a semiconductor substrate 101. A side surface of the silicon nitride film 104 is formed into a forward tapered shape by etching with a photoresist 105 used as a mask. The polycrystalline silicon film 103 is formed into a substantially vertical shape by etching with the silicon nitride film 104 used as a mask. After pocket injection 1a by an injection angle inclined with respect to the normal direction of the principal plane of the semiconductor substrate 101, bit line injection is carried out along the normal direction of the principal plane of the semiconductor substrate 101. An upper polycrystalline silicon film 110 is formed by filling between the polycrystalline silicon film 103 with an embedded insulating film 109. COPYRIGHT: (C)2008,JPO&INPIT
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