| 摘要 |
PROBLEM TO BE SOLVED: To improve element characteristics by reducing step bunching of a surface of an SiC epitaxial layer formed on an SiC substrate. SOLUTION: A silicon carbide semiconductor element has a 4H-SiC substrate 1 and the SiC epitaxial layer 3 formed on a surface of a 4H-SiC substrate 1, which has an OFF angle of 3°to 5°, at least a partial surface of the SiC epitaxial layer 3 having a surface roughness of≤1 nm. COPYRIGHT: (C)2008,JPO&INPIT |
